COMPOSITION FOR FORMING BASE BLOCKING ANTIREFLECTION FILM AND METHOD FOR FORMING RESIST PATTERN

• Main Authors: KIMURA TORU, NOMURA NAKAATSU, KONNO KEIJI
• Format: Patent
• Language: English
• Published: 22.12.2005
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a composition for forming a base blocking antireflection film, the composition which has excellent coating property and significantly suppresses production of microbubbles and which results in an antireflection film sufficiently decreasing a standing wave effect and having excellent solubility with water and a developing solution, and to provide a method for forming a resist pattern using the above composition. SOLUTION: The composition for forming a base blocking antireflection film contains: (A) a copolymer (salt) of a sulfonic acid group-containing acryl amide derivative represented by 2-(meth)acrylamide-2-methylpropane sulfonic acid or the like and a fluoroalkyl group-containing acrylate derivative represented by 2,2,3,3,3-pentafluoropropyl (meth)acrylate or the like; and (B) a water-soluble compound such as polyhydric alcohols and monoalkyl ether of polyhydric alcohols. The resist pattern is obtained by forming a base blocking antireflection film from the above composition on a resist coating film formed on a substrate, irradiating the resist with radiation, and developing. COPYRIGHT: (C)2006,JPO&NCIPI