METHOD AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: KONNO AKIHIKO, SATO SHIGENORI, MIWA TOSHIHARU, MORIOKA NATSUYO
• Format: Patent
• Language: English
• Published: 15.12.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To solve the problem that the irregularity of the groove depth required to trench etching becomes serious year and year; a plurality of factors such as selection of the kind of products and the performance variation of an etching apparatus/chamber vary the groove depth of trench etching, in a semiconductor device manufacturing line of many kinds in small quantities represented by a system LSI in particular; and it is desired to control the irregularity of the groove depth without carrying out adjusting operation from the view point of the productivity of the etching apparatus. SOLUTION: In the trench etching treatment of the manufacture of a semiconductor device, the groove depth variation caused by the etched pattern density of an etching treatment object wafer and the time series variation of the groove depth caused by the device/chamber calculated from past groove depth data and set etching time data are obtained to calculate an etching time for correcting these variations. COPYRIGHT: (C)2006,JPO&NCIPI