MASK BLANK AND MASK FOR ELECTRON BEAM EXPOSURE

PROBLEM TO BE SOLVED: To obtain a pattern support layer thin in film thickness with a small temporal change in stress. SOLUTION: In a mask and a mask blank having a pattern support layer (6) that transmits electron beams, an electron beam scattering layer (5) formed on the pattern support layer, and...

Full description

Saved in:
Bibliographic Details
Main Author AMAMIYA ISAO
Format Patent
LanguageEnglish
Published 08.12.2005
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
AUXILIARY PROCESSES IN PHOTOGRAPHY
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
MATERIALS THEREFOR
ORIGINALS THEREFOR
PERFORMING OPERATIONS
PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES
PHYSICS
SEMICONDUCTOR DEVICES
TRANSPORTING
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To obtain a pattern support layer thin in film thickness with a small temporal change in stress. SOLUTION: In a mask and a mask blank having a pattern support layer (6) that transmits electron beams, an electron beam scattering layer (5) formed on the pattern support layer, and a support body (3) for supporting the pattern support layer and the electron beam scattering layer, the pattern support layer is made of a material with an amorphous structure mainly composed of bonds between carbon and silicon and is tensile stress film formed such that the surface roughness is 0.2 (nm, Rms) or less. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20050155842