PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which the occurrence of metal burr can be suppressed at a part close to a level difference. SOLUTION: In the process for fabricating a semiconductor device by forming a photoresist pattern opening the region includi...

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Bibliographic Details
Main Author KAMEYAMA TAKEHIKO
Format Patent
LanguageEnglish
Published 24.11.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which the occurrence of metal burr can be suppressed at a part close to a level difference. SOLUTION: In the process for fabricating a semiconductor device by forming a photoresist pattern opening the region including the upper and lower parts of a level difference formed on a semiconductor substrate, and forming a self-aligned metal pattern on the semiconductor substrate at the upper and lower parts of the level difference by lift-off method, a photoresist pattern provided with an opening is formed to extend substantially in parallel with the extending direction of the level difference from the upper part of the level difference at the lower part thereof, and a metal pattern is formed by a lift-off method. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20040145843