GAS CHARGING MEANS FOR PLASMA ETCHING APPARATUS AND GAS SHOWER PLATE

PROBLEM TO BE SOLVED: To attain uniform intra-surface distribution of active seed and by-product gas which make contribution to the plasma processing even in the conventional plasma processing apparatus in which evacuation is implemented only from the periphery of the processing object. SOLUTION: Th...

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Bibliographic Details
Main Authors IZAWA MASARU, NEGISHI NOBUYUKI, MOMOI YOSHINORI, YOKOGAWA KATANOBU
Format Patent
LanguageEnglish
Published 27.10.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PLASMA TECHNIQUE
PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS
PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To attain uniform intra-surface distribution of active seed and by-product gas which make contribution to the plasma processing even in the conventional plasma processing apparatus in which evacuation is implemented only from the periphery of the processing object. SOLUTION: The plasma processing apparatus is provided with a gas injecting means including a plurality of gas injecting ports 18 at the surface opposing to the processing object 8 in order to implement the process to the processing object 8. The uniform plasma process can be implemented to the processing object by injecting a mixed gas having different flow rate ratios of two or more kinds of gas from different gas injecting ports. Moreover, the uniform plasma process can also be implemented to the processing object by providing a gas charging port to the surface opposing to the processing object. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20050182913