LPP TYPE EUV LIGHT SOURCE APPARATUS

PROBLEM TO BE SOLVED: To provide an LPP (laser-produced plasma) type EUV light source apparatus which increases an amount of EUV light without increasing an amount of a target material. SOLUTION: Laser light is focused in a shape of an ellipse onto a target, where the major axis of the ellipse is ne...

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Bibliographic Details
Main Authors SUGANUMA TAKASHI, ABE TAMOTSU
Format Patent
LanguageEnglish
Published 06.10.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PLASMA TECHNIQUE
PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS
PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
SEMICONDUCTOR DEVICES
X-RAY TECHNIQUE
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Summary:PROBLEM TO BE SOLVED: To provide an LPP (laser-produced plasma) type EUV light source apparatus which increases an amount of EUV light without increasing an amount of a target material. SOLUTION: Laser light is focused in a shape of an ellipse onto a target, where the major axis of the ellipse is nearly oriented to a target flow direction, and the length of the minor axis of the ellipse is equal to or less than the diameter of the target. COPYRIGHT: (C)2006,JPO&NCIPI
Bibliography:Application Number: JP20040089287