NANO SCALE FIELD EFFECT ELEMENT HAVING AIR GAP BETWEEN SOURCE ELECTRODE AND DRAIN ELECTRODE PROCESSED WITH FINE METAL PARTICLE COATED WITH THIOL OR DISULFIDE MOLECULE

PROBLEM TO BE SOLVED: To provide a nanometer scale field effect element exhibiting good reproducibility of signal. SOLUTION: In a field effect element comprising a source electrode S, a gate electrode, and a drain electrode D fabricated in a semiconductor substrate in nanometer scale, a space above...

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Bibliographic Details
Main Authors NAITO YASUHISA, HORIKAWA MASAYO, ISHIDA TAKAO, NAKANO YOSHINORI, MIZUTANI WATARU
Format Patent
LanguageEnglish
Published 02.09.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a nanometer scale field effect element exhibiting good reproducibility of signal. SOLUTION: In a field effect element comprising a source electrode S, a gate electrode, and a drain electrode D fabricated in a semiconductor substrate in nanometer scale, a space above the semiconductor substrate connecting the source electrode and the drain electrode is processed with fine metal particles coated with thiol or disulfide represented by general formula CH3(CH2)nSH or (CH3(CH2)nSH-)2(in the formula, n is an integer of 3-30). COPYRIGHT: (C)2005,JPO&NCIPI
Bibliography:Application Number: JP20040040812