MANUFACTURING METHOD OF EPITAXIAL SILICON WAFER, AND SILICON WAFER MANUFACTURED THEREBY

• Main Authors: ONO TOSHIAKI, HORAI MASATAKA
• Format: Patent
• Language: English
• Published: 18.08.2005
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To reduce the amount of germanium doped, and to suppress occurrence of mis-fit dislocation. SOLUTION: A silicon ingot where boron and germanium are doped is sliced, and a silicon wafer 11 is formed. Thermal oxidation treatment is carried out on the wafer 11, and a thermal oxide film 12 is formed on the surface layer 11a of the wafer 11. Thus, concentration of germanium is set high in the vicinity of an interface 11c between the wafer 11 and the thermal oxide film 12. The thermal oxide film 12 is removed from the surface layer part 11a of the wafer 11. An epitaxial layer 13, formed of silicon single crystal, where boron is doped whose concentration is lower than that of boron in the wafer 11, is grown on a surface layer part 11b of the wafer 11 by an epitaxial growing method. COPYRIGHT: (C)2005,JPO&NCIPI