APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR

• Main Author: MASHITA SHINICHI
• Format: Patent
• Language: English
• Published: 11.08.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus and a semiconductor manufacturing method in which a sensor which interferes smooth flow of the raw material gas is not arranged within the gas piping and re-liquefaction of the raw material gas is detected in direct. SOLUTION: The CVD apparatus 101 is provided with a reservoir vessel 4 for storing the raw material liquid 2 and reserving the raw material gas 3 for vaporizing the raw material liquid 2 to generate the raw material gas, and a processing chamber 6 connected to the reservoir vessel 4 via the raw material gas piping 5 for transferring the raw material gas 3. At the external bottom of the horizontal portion of the raw material gas piping 5, a static-electricity capacitance type liquid sensor 102 for detecting existence of liquid with change in the static-electricity capacitance, and a heater 17 which is controlled with a temperature controller 16 connected to such liquid sensor 102, are provided in order to detect and prevent re-liquefaction of the raw material gas 3. COPYRIGHT: (C)2005,JPO&NCIPI