SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method thereof which includes a varactor having a large variable-capacitance range. SOLUTION: The semiconductor device has a gate electrode 105 formed above an N-well 101 via an insulating film 103 and has a counter impuri...

Full description

Saved in:
Bibliographic Details
Main Authors MIYAJIMA AKIO, TSUNO MORIKAZU, KANEZAKI EMI, MIURA YOSHIO
Format Patent
LanguageEnglish
Published 04.08.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method thereof which includes a varactor having a large variable-capacitance range. SOLUTION: The semiconductor device has a gate electrode 105 formed above an N-well 101 via an insulating film 103 and has a counter impurity layer 108 formed by introducing a p-type impurity into the surface region of the n-well 101 which is present under the gate electrode 105. Further, there is included in the device a varactor for generating a capacitance by the gate electrode 105 and the counter impurity layer 108. COPYRIGHT: (C)2005,JPO&NCIPI
Bibliography:Application Number: JP20040017177