SEMICONDUCTOR DEVICE

• Main Authors: KUSHIBE MITSUHIRO, FUJIMOTO HIDETOSHI
• Format: Patent
• Language: English
• Published: 23.06.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DEVICES USING STIMULATED EMISSION; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a semiconductor device having a good characteristic, such as characteristic of material, where crystals of excellent quality can be uniformly grown on a large substrate whose lattice is irregular. SOLUTION: The semiconductor device is deposited on the substrate having a surface orientation of an angle of 0.05°or more different from a (0001) surface of GaN or AlN. Especially, in the case of Gan, the light emitting efficiency is abruptly improved at an off-angle of 0.5° or more. Its temperature characteristic can be improved by using the AlN substrate having almost 5 times as large heat transfer rate as sapphire. Moreover, locating a quantum well structure between the substrate and the light emitting layer allows preventing a transition from spreading to an active layer, thereby, the characteristic can be improved. COPYRIGHT: (C)2005,JPO&NCIPI