PLASMA CVD FILM DEPOSITION APPARATUS

• Main Authors: TAKAHASHI HIDEAKI, TADA SHIGEKAZU, TAKEMOTO YOSHIHIDE, KAGE TAKESHI
• Format: Patent
• Language: English
• Published: 23.06.2005
• Edition: 7
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To realize the consistent operation of a plasma CVD film deposition apparatus for a long time by reducing the residual energy of exhaust gas exhausted from a vacuum chamber to suppress degradation of an exhaust path. SOLUTION: A plasma CVD film deposition apparatus comprises a...