PLASMA CVD FILM DEPOSITION APPARATUS

• Main Authors: TAKAHASHI HIDEAKI, TADA SHIGEKAZU, TAKEMOTO YOSHIHIDE, KAGE TAKESHI
• Format: Patent
• Language: English
• Published: 23.06.2005
• Edition: 7
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To realize the consistent operation of a plasma CVD film deposition apparatus for a long time by reducing the residual energy of exhaust gas exhausted from a vacuum chamber to suppress degradation of an exhaust path. SOLUTION: A plasma CVD film deposition apparatus comprises a vacuum chamber to store a plastic container, a raw gas feed means to feed raw gas to at least one of an internal space of the plastic container and an external space of the plastic container, a plasma generating means to supply high frequency waves or microwaves to plasmatize the raw gas, and an exhaust means which is connected to the vacuum chamber and provided with at least an exhaust mans to exhaust the raw gas, and deposits a CVD film on at least one of an inner surface and an outer surface of the plastic container. A conductive member with permeability is arranged in an exhaust path to make the vacuum chamber communicate with the exhaust means. COPYRIGHT: (C)2005,JPO&NCIPI