CAPACITIVE ELEMENT AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To prevent generation of disconnection in a capacitive lower electrode formed in the corner of a bottom of step difference, and to provide a solid capacitive element suitable for high degree of integration, and to provide its manufacturing method. SOLUTION: The capacitive eleme...

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Bibliographic Details
Main Authors NOMA JUNJI, MOCHO YOSHINOBU
Format Patent
LanguageEnglish
Published 09.06.2005
Edition7
Subjects
ELECTRICITY
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Summary:PROBLEM TO BE SOLVED: To prevent generation of disconnection in a capacitive lower electrode formed in the corner of a bottom of step difference, and to provide a solid capacitive element suitable for high degree of integration, and to provide its manufacturing method. SOLUTION: The capacitive element is constituted of a capacitive lower electrode formed in order on at least a wall surface of step difference formed in an insulating film on a semiconductor substrate, a capacitive insulating film and a capacitive upper electrode. The capacitive lower electrode is formed in a corner on a lower surface in the step difference, and constituted of a first conductive film 13a having an inclined surface and a second conductive film 15 formed on wall surface on the first conductive film 13a and a wall surface of the step difference. COPYRIGHT: (C)2005,JPO&NCIPI
Bibliography:Application Number: JP20030382124