SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

• Main Authors: TSUTSUI MASASHI, UMIMOTO HIROYUKI
• Format: Patent
• Language: English
• Published: 26.05.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device that suppresses an increase in area and comprises a capacitor having a high capacitance value, and to provide a method for manufacturing the semiconductor device. SOLUTION: In a capacitor region Rb of the semiconductor device, a first wire 1 and a second one 2 are provided. In each of the first and second wires 1, 2, there are provided first and second lower wires 1a, 2a formed by a common process with a first layer wire 58 in a logic region Ra, first and second upper wires 1b, 2b formed by a common process with a second layer wire 60 in the logic region Ra, and first and second wall-like longitudinal wires 1c, 2c formed by a common process with a plug 59 in the logic region Ra. Connection is made with the upper wire 2b via the second wall-like longitudinal wire 2c formed by the common process with the plug 59 in the logic region Ra. The first longitudinal wire 1c and the second one 2c oppose each other laterally while holding one portion of an upper interlayer insulating film 6, and a capacitor having a high capacitance value is composed. COPYRIGHT: (C)2005,JPO&NCIPI