POLYMER COMPOUND, RESIST MATERIAL, AND METHOD FOR FORMING PATTERN

PROBLEM TO BE SOLVED: To provide a resist material having excellent transmittance to exposure light having a wavelength zone of not more than 300 nm, and further having excellent adhesion to a substrate and solubility in a developing solution. SOLUTION: A polymer compound contains first units each h...

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Bibliographic Details
Main Authors ENDO MASATAKA, SASAKO MASARU, UEDA MITSURU, IIMORI HIROKAZU, KISHIMURA SHINJI, FUKUHARA TOSHIAKI
Format Patent
LanguageEnglish
Published 19.05.2005
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:PROBLEM TO BE SOLVED: To provide a resist material having excellent transmittance to exposure light having a wavelength zone of not more than 300 nm, and further having excellent adhesion to a substrate and solubility in a developing solution. SOLUTION: A polymer compound contains first units each having a specified chemical structure and second units each having a specified chemical structure, and has a weight-average molecular weight of not less than 1,000 and not more than 500,000. The polymer compound is highly hydrophilic, because the first unit has a sulfonamide group in its side chain, and further the polymer compound is provided with such a characteristic that the transmittance to the exposure light having the wavelength zone of not more than 300 nm is high. When the polymer compound is used for forming a resist film, the film has the increased adhesion to the substrate, has the excellent solubility in the developing solution, without having a swelling effect, and forms a good resist pattern. Further, the second unit has a benzene ring in its side chain, so that the second unit contributes to improvement of resistance to dry etching of the resist film. COPYRIGHT: (C)2005,JPO&NCIPI
Bibliography:Application Number: JP20040278203