POLYMER COMPOUND, RESIST MATERIAL, AND METHOD FOR FORMING PATTERN
PROBLEM TO BE SOLVED: To provide a resist material having excellent transmittance to exposure light having a wavelength zone of not more than 300 nm, and further having excellent adhesion to a substrate and solubility in a developing solution. SOLUTION: A polymer compound contains first units each h...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
19.05.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a resist material having excellent transmittance to exposure light having a wavelength zone of not more than 300 nm, and further having excellent adhesion to a substrate and solubility in a developing solution. SOLUTION: A polymer compound contains first units each having a specified chemical structure and second units each having a specified chemical structure, and has a weight-average molecular weight of not less than 1,000 and not more than 500,000. The polymer compound is highly hydrophilic, because the first unit has a sulfonamide group in its side chain, and further the polymer compound is provided with such a characteristic that the transmittance to the exposure light having the wavelength zone of not more than 300 nm is high. When the polymer compound is used for forming a resist film, the film has the increased adhesion to the substrate, has the excellent solubility in the developing solution, without having a swelling effect, and forms a good resist pattern. Further, the second unit has a benzene ring in its side chain, so that the second unit contributes to improvement of resistance to dry etching of the resist film. COPYRIGHT: (C)2005,JPO&NCIPI |
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Bibliography: | Application Number: JP20040278203 |