SEMICONDUCTOR ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To reduce contact resistance of an electrode in a semiconductor electronic device wherein a contact layer of the electrode is not formed by selective growth. SOLUTION: In the semiconductor electronic device including at least a nitride chemical compound semiconductor layer and...

Full description

Saved in:
Bibliographic Details
Main Authors YOSHIDA KIYOTERU, NAKAI AKINOBU
Format Patent
LanguageEnglish
Published 28.04.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To reduce contact resistance of an electrode in a semiconductor electronic device wherein a contact layer of the electrode is not formed by selective growth. SOLUTION: In the semiconductor electronic device including at least a nitride chemical compound semiconductor layer and an electrode in an area including a part of at least a surface of the nitride semiconductor layer, an impurity is added and band gap energy is smaller than that of the nitride semiconductor layer other than the area, and the electrode is configured in contact with the area. Furthermore, the nitride chemical compound semiconductor layer contains AlxGa1-xN (0≤x<1), and the impurity contains at least one of In, As, P, Sb. COPYRIGHT: (C)2005,JPO&NCIPI
Bibliography:Application Number: JP20030350469