HIGHLY CRYSTALLINE ALUMINUM NITRIDE LAMINATED SUBSTRATE AND ITS PRODUCING METHOD

• Main Authors: NAKAO KO, KUSUNOKI SHINYA, HAKOMORI AKIRA, TAKADA KAZUYA, FUKUYAMA HIROYUKI
• Format: Patent
• Language: English
• Published: 21.04.2005
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a highly crystalline aluminum nitride laminated substrate having a high crystalline aluminum nitride (AlN) film at the outermost layer and its producing method. SOLUTION: The highly crystalline aluminum nitride laminated substrate is characterized by that the highly crystalline aluminum nitride film is laminated as the outermost layer through an aluminum oxynitride layer on an α-alumina single crystal substrate, and the penetrating dislocation density of the aluminum oxynitride layer is 6.3×107/cm2or less and its crystal orientation expressed by the half-value width of a locking curve is 4,320 arcsec or less. COPYRIGHT: (C)2005,JPO&NCIPI