PLASMA ETCHING APPARATUS

• Main Authors: CHOI HEE-HWAN, KIN SHOKO, KYO SEITETSU
• Format: Patent
• Language: English
• Published: 31.03.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a plasma etching apparatus having a chamber into which gas flows uniformly. SOLUTION: The plasma etching apparatus has the chamber 10, which is equipped with an upper plasma electrode 32 in its upper portion and a lower plasma electrode 31 in its lower portion, respectively. A plurality of diffuser sheets 70 are disposed between the upper plasma electrode and a gas feed pipe 60 which is connected to the chamber. An electric power generator 40 for applying plasma voltage to the upper and lower plasma electrodes is disposed, a plurality of gas injection nozzles 32a are formed on the upper plasma electrode, and a plurality of auxiliary injection nozzles 70a are formed on the diffuser sheets. COPYRIGHT: (C)2005,JPO&NCIPI