PLASMA ETCHING APPARATUS

PROBLEM TO BE SOLVED: To provide a plasma etching apparatus having a chamber into which gas flows uniformly. SOLUTION: The plasma etching apparatus has the chamber 10, which is equipped with an upper plasma electrode 32 in its upper portion and a lower plasma electrode 31 in its lower portion, respe...

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Bibliographic Details
Main Authors CHOI HEE-HWAN, KIN SHOKO, KYO SEITETSU
Format Patent
LanguageEnglish
Published 31.03.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PLASMA TECHNIQUE
PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS
PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a plasma etching apparatus having a chamber into which gas flows uniformly. SOLUTION: The plasma etching apparatus has the chamber 10, which is equipped with an upper plasma electrode 32 in its upper portion and a lower plasma electrode 31 in its lower portion, respectively. A plurality of diffuser sheets 70 are disposed between the upper plasma electrode and a gas feed pipe 60 which is connected to the chamber. An electric power generator 40 for applying plasma voltage to the upper and lower plasma electrodes is disposed, a plurality of gas injection nozzles 32a are formed on the upper plasma electrode, and a plurality of auxiliary injection nozzles 70a are formed on the diffuser sheets. COPYRIGHT: (C)2005,JPO&NCIPI
Bibliography:Application Number: JP20040258080