THIN FILM DEPOSITION SYSTEM AND THIN FILM DEPOSITION METHOD

• Main Authors: TANGE HISAHIRO, MATSUMOTO SHIGEJI, HONDA HIROMITSU, TACHIBANA TAKAHIKO, SATO KAZUHIRO
• Format: Patent
• Language: English
• Published: 24.03.2005
• Edition: 7
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a thin film deposition system capable of depositing a high density thin film with high reproducibility and at a high film deposition rate by realizing a stable film deposition process. SOLUTION: A thin film deposition system 1 where raw materials Sa and Sb are heated in a vacuum tank 11 and the resultant evaporated raw materials are stuck to a substrate to deposit a thin film is provided with: a substrate holding means 13; vapor deposition sources 30a and 30b for evaporating raw materials to form evaporated raw materials; and an ion radiation means 60 for radiating ions toward a substrate. Further, for exciting the raw materials evaporated from the vapor deposition sources 30a and 30b by generating plasma at the upper positions Pa and Pb of the vapor deposition sources 30a and 30b, plasma electrodes 17a and 17b, exciting power sources 26a and 26b, and sticking suppression parts 18a and 18b for suppressing the sticking of the raw materials evaporated from the vapor deposition sources 30a and 30b are provided. COPYRIGHT: (C)2005,JPO&NCIPI