METHOD FOR MANUFACTURING SEMICONDUCTOR THIN FILM WITH SURFACE WAVE, AND SEMICONDUCTOR THIN FILM

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor thin film using surface waves, which is simple and can reduce the cost and control crystal grain boundary, and to provide a semiconductor thin film. SOLUTION: Preliminary wave motion is generated on a semiconductor thin film...

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Bibliographic Details
Main Authors OTANI TAKEHIKO, HOTTA SUSUMU, KAKI HIROKAZU
Format Patent
LanguageEnglish
Published 17.03.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor thin film using surface waves, which is simple and can reduce the cost and control crystal grain boundary, and to provide a semiconductor thin film. SOLUTION: Preliminary wave motion is generated on a semiconductor thin film surface on a substrate. In this state, spatially periodical crystal grain boundary is formed broadly and stably on the semiconductor thin film surface by the irradiation of a linearly polarized laser beam. COPYRIGHT: (C)2005,JPO&NCIPI
Bibliography:Application Number: JP20030298220