SUBSTRATE TREATMENT SYSTEM

• Main Authors: WADA TETSUYA, NOUCHI HIDEHIRO
• Format: Patent
• Language: English
• Published: 03.03.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To attain excellent work efficiency, fabrication efficiency and low cost while preventing the generation of particles by prolonging the lifetime of a high temperature valve significantly and preventing the frequent replacement thereof thereby extending the down-time interval of a substrate treatment system and enhancing the rate of operation of the system. SOLUTION: The substrate treatment system comprises a treatment chamber 3 for treating a substrate 12, a treatment gas line 4 for supplying treatment gas to the treatment chamber 3, a plurality of valves V1, V2, V3 and V4 provided in series in the treatment gas line 4, and a control means for supplying treatment gas to the treatment gas line 4 while closing the valve V1 located on the most downstream side and opening other valves, filling the space between adjacent valves in the treatment gas line 4 with the treatment gas by closing all valves subsequently, and supplying the treatment gas intermittently to the treatment chamber 3 by opening the valves sequentially starting from the valve located on the most downstream side. COPYRIGHT: (C)2005,JPO&NCIPI