STRIPPER COMPOSITION FOR RESIST

• Main Author: SHIROTA MASAMI
• Format: Patent
• Language: English
• Published: 03.03.2005
• Edition: 7
• Subjects: ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CANDLES; CHEMISTRY; CINEMATOGRAPHY; DETERGENT COMPOSITIONS; DETERGENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; FATTY ACIDS THEREFROM; HOLOGRAPHY; MATERIALS THEREFOR; METALLURGY; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; RECOVERY OF GLYCEROL; RESIN SOAPS; SEMICONDUCTOR DEVICES; SOAP OR SOAP-MAKING; USE OF SINGLE SUBSTANCES AS DETERGENTS

PROBLEM TO BE SOLVED: To provide a stripper composition for a resist which can easily strip in a short time a resist applied on a semiconductor such as Si, GaAS, GaN and InP, a metal wiring and an interlayer insulating thin film, or a resist remaining after dry etching, or a resist residue remaining after ashing after dry etching, which does not corrode the semiconductor and which maintains the characteristics of a field effect transistor (FET), and to provide a method for stripping a resist and a method for manufacturing a semiconductor element by using the above stripper composition for a resist. SOLUTION: The stripper composition for a resist contains (A) amine, (B) an organic solvent having 18 to 33 MPa1/2Hansen's solubility parameter, (C) saccharides and (D) water by 0 to 5 wt.%. The method for stripping a resist is carried out by using the above stripper composition for a resist. The method for manufacturing a semiconductor element includes a process of stripping a resist, and in the process of stripping a resist, the above stripper composition for a resist is used to strip a resist. COPYRIGHT: (C)2005,JPO&NCIPI