POLYMER FOR RESIST, RESIST MATERIAL AND PATTERN-FORMING METHOD
PROBLEM TO BE SOLVED: To provide a resist material which is prepared by using a polymer and is sensitive to high energy rays, excellent in resolution and a size difference between a dense pattern and a sparse pattern and therefore useful for microfabrication for manufacturing a VLSI by electron beam...
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Format | Patent |
Language | English |
Published |
03.03.2005
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Edition | 7 |
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Abstract | PROBLEM TO BE SOLVED: To provide a resist material which is prepared by using a polymer and is sensitive to high energy rays, excellent in resolution and a size difference between a dense pattern and a sparse pattern and therefore useful for microfabrication for manufacturing a VLSI by electron beams or far ultraviolet rays. SOLUTION: The resin whose dissolution rate in an alkali developer is increased by the action of an acid comprises a polymer containing at least one of each of recurring units represented by general formulae (1)-(4). In general formulae (1)-(4), R1, R2, R3and R6are each independently a hydrogen atom or a methyl group; R4and R5are each independently a hydrogen atom or a hydroxy group; X is a tertiary exo-alkyl group bearing a bicyclo[2.2.1]heptane skeleton represented by either one of general formulae (X-1) to (X-4); and Y is a tertiary alkyl group bearing an adamantane skeleton. In general formulae (X-1) to (X-4), R7is a 1-10C straight chain, branched or cyclic alkyl group; and the dashed line means a bonding position and a bonding direction. COPYRIGHT: (C)2005,JPO&NCIPI |
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AbstractList | PROBLEM TO BE SOLVED: To provide a resist material which is prepared by using a polymer and is sensitive to high energy rays, excellent in resolution and a size difference between a dense pattern and a sparse pattern and therefore useful for microfabrication for manufacturing a VLSI by electron beams or far ultraviolet rays. SOLUTION: The resin whose dissolution rate in an alkali developer is increased by the action of an acid comprises a polymer containing at least one of each of recurring units represented by general formulae (1)-(4). In general formulae (1)-(4), R1, R2, R3and R6are each independently a hydrogen atom or a methyl group; R4and R5are each independently a hydrogen atom or a hydroxy group; X is a tertiary exo-alkyl group bearing a bicyclo[2.2.1]heptane skeleton represented by either one of general formulae (X-1) to (X-4); and Y is a tertiary alkyl group bearing an adamantane skeleton. In general formulae (X-1) to (X-4), R7is a 1-10C straight chain, branched or cyclic alkyl group; and the dashed line means a bonding position and a bonding direction. COPYRIGHT: (C)2005,JPO&NCIPI |
Author | HASEGAWA KOJI WATANABE TAKESHI NISHI TSUNEHIRO FUNATSU AKIYUKI TSUCHIYA JUNJI |
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Snippet | PROBLEM TO BE SOLVED: To provide a resist material which is prepared by using a polymer and is sensitive to high energy rays, excellent in resolution and a... |
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SubjectTerms | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS THEIR PREPARATION OR CHEMICAL WORKING-UP |
Title | POLYMER FOR RESIST, RESIST MATERIAL AND PATTERN-FORMING METHOD |
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