POLYMER FOR RESIST, RESIST MATERIAL AND PATTERN-FORMING METHOD

PROBLEM TO BE SOLVED: To provide a resist material which is prepared by using a polymer and is sensitive to high energy rays, excellent in resolution and a size difference between a dense pattern and a sparse pattern and therefore useful for microfabrication for manufacturing a VLSI by electron beam...

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Main Authors WATANABE TAKESHI, TSUCHIYA JUNJI, FUNATSU AKIYUKI, HASEGAWA KOJI, NISHI TSUNEHIRO
Format Patent
LanguageEnglish
Published 03.03.2005
Edition7
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Abstract PROBLEM TO BE SOLVED: To provide a resist material which is prepared by using a polymer and is sensitive to high energy rays, excellent in resolution and a size difference between a dense pattern and a sparse pattern and therefore useful for microfabrication for manufacturing a VLSI by electron beams or far ultraviolet rays. SOLUTION: The resin whose dissolution rate in an alkali developer is increased by the action of an acid comprises a polymer containing at least one of each of recurring units represented by general formulae (1)-(4). In general formulae (1)-(4), R1, R2, R3and R6are each independently a hydrogen atom or a methyl group; R4and R5are each independently a hydrogen atom or a hydroxy group; X is a tertiary exo-alkyl group bearing a bicyclo[2.2.1]heptane skeleton represented by either one of general formulae (X-1) to (X-4); and Y is a tertiary alkyl group bearing an adamantane skeleton. In general formulae (X-1) to (X-4), R7is a 1-10C straight chain, branched or cyclic alkyl group; and the dashed line means a bonding position and a bonding direction. COPYRIGHT: (C)2005,JPO&NCIPI
AbstractList PROBLEM TO BE SOLVED: To provide a resist material which is prepared by using a polymer and is sensitive to high energy rays, excellent in resolution and a size difference between a dense pattern and a sparse pattern and therefore useful for microfabrication for manufacturing a VLSI by electron beams or far ultraviolet rays. SOLUTION: The resin whose dissolution rate in an alkali developer is increased by the action of an acid comprises a polymer containing at least one of each of recurring units represented by general formulae (1)-(4). In general formulae (1)-(4), R1, R2, R3and R6are each independently a hydrogen atom or a methyl group; R4and R5are each independently a hydrogen atom or a hydroxy group; X is a tertiary exo-alkyl group bearing a bicyclo[2.2.1]heptane skeleton represented by either one of general formulae (X-1) to (X-4); and Y is a tertiary alkyl group bearing an adamantane skeleton. In general formulae (X-1) to (X-4), R7is a 1-10C straight chain, branched or cyclic alkyl group; and the dashed line means a bonding position and a bonding direction. COPYRIGHT: (C)2005,JPO&NCIPI
Author HASEGAWA KOJI
WATANABE TAKESHI
NISHI TSUNEHIRO
FUNATSU AKIYUKI
TSUCHIYA JUNJI
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– fullname: HASEGAWA KOJI
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Snippet PROBLEM TO BE SOLVED: To provide a resist material which is prepared by using a polymer and is sensitive to high energy rays, excellent in resolution and a...
SourceID epo
SourceType Open Access Repository
SubjectTerms APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
THEIR PREPARATION OR CHEMICAL WORKING-UP
Title POLYMER FOR RESIST, RESIST MATERIAL AND PATTERN-FORMING METHOD
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