POLYMER FOR RESIST, RESIST MATERIAL AND PATTERN-FORMING METHOD
PROBLEM TO BE SOLVED: To provide a resist material which is prepared by using a polymer and is sensitive to high energy rays, excellent in resolution and a size difference between a dense pattern and a sparse pattern and therefore useful for microfabrication for manufacturing a VLSI by electron beam...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
03.03.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a resist material which is prepared by using a polymer and is sensitive to high energy rays, excellent in resolution and a size difference between a dense pattern and a sparse pattern and therefore useful for microfabrication for manufacturing a VLSI by electron beams or far ultraviolet rays. SOLUTION: The resin whose dissolution rate in an alkali developer is increased by the action of an acid comprises a polymer containing at least one of each of recurring units represented by general formulae (1)-(4). In general formulae (1)-(4), R1, R2, R3and R6are each independently a hydrogen atom or a methyl group; R4and R5are each independently a hydrogen atom or a hydroxy group; X is a tertiary exo-alkyl group bearing a bicyclo[2.2.1]heptane skeleton represented by either one of general formulae (X-1) to (X-4); and Y is a tertiary alkyl group bearing an adamantane skeleton. In general formulae (X-1) to (X-4), R7is a 1-10C straight chain, branched or cyclic alkyl group; and the dashed line means a bonding position and a bonding direction. COPYRIGHT: (C)2005,JPO&NCIPI |
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Bibliography: | Application Number: JP20030288844 |