SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To suppress breakdown of a semiconductor chip due to thermal stress in a semiconductor device where the electrode of the semiconductor chip is bonded to solder. SOLUTION: An Al electrode 19 formed on a semiconductor substrate 15 through an interlayer insulating film 17 is conne...

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Bibliographic Details
Main Authors KAYUKAWA KIMIJI, MIURA SHOJI, NORITAKE CHIKAGE, MAYAMA KEIJI
Format Patent
LanguageEnglish
Published 20.01.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To suppress breakdown of a semiconductor chip due to thermal stress in a semiconductor device where the electrode of the semiconductor chip is bonded to solder. SOLUTION: An Al electrode 19 formed on a semiconductor substrate 15 through an interlayer insulating film 17 is connected electrically with a P type layer 13 and an N+type layer 14 through a contact hole 18 formed in the interlayer insulating film 17 and an Ni plating layer 20 is formed on the Al electrode 19. In the semiconductor device having a constitution where the Ni plating layer 20 of the semiconductor chip is bonded to solder 6b, a void 25 is provided in the Al electrode 19 at a position on th upper side of the contact hole 18. COPYRIGHT: (C)2005,JPO&NCIPI
Bibliography:Application Number: JP20030184755