METHOD FOR COATING SUBSTRATE FOR EUV LITHOGRAPHY AND SUBSTRATE WITH PHOTORESIST LAYER

PROBLEM TO BE SOLVED: To protect a photoresist layer from contaminants by applying an EUV (extreme UV) transmissive top coat comprising a non-aqueous based agent on the photoresist layer, because if an aqueous coating film is applied to protect a substrate in a lithographic projecting apparatus usin...

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Bibliographic Details
Main Authors DIERICHS MARCLE MATHIJS T M, VAN INGEN SCHENAU KOEN
Format Patent
LanguageEnglish
Published 09.12.2004
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Summary:PROBLEM TO BE SOLVED: To protect a photoresist layer from contaminants by applying an EUV (extreme UV) transmissive top coat comprising a non-aqueous based agent on the photoresist layer, because if an aqueous coating film is applied to protect a substrate in a lithographic projecting apparatus using EUV rays, the film undesirably absorbs EUV light and causes outgassing of water which results in degradation of an optical element. SOLUTION: The EUV transmissive top coat TC is applied on the photoresist layer PRL on the substrate W. The EUV transmissive top coat contains a polymer including a group comprising one or more atoms of beryllium, boron, carbon, silicon, zirconium, niobium and molybdenum. The top coat TC can be not only used as a resist protective film and/or for preventing contamination of the resist but it improves EUV/DUV (deep UV) selectivity and reduces the number of spectral filters required. Or the layer can be used as a charge dissipating or conducting layer, which results in little electrification in the photoresist during processing. COPYRIGHT: (C)2005,JPO&NCIPI
Bibliography:Application Number: JP20040150182