RIDGE WAVEGUIDE SEMICONDUCTOR LASER

• Main Authors: TAKIGUCHI TORU, HANAMAKI YOSHIHIKO, TANAKA TOSHIO, TOMITA NOBUYUKI, KADOWAKI TOMOKO, MIHASHI YUTAKA
• Format: Patent
• Language: English
• Published: 25.11.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To provide a ridge waveguide semiconductor laser that is high in reliability and can operate at a high speed at a high temperature. SOLUTION: This ridge waveguide semiconductor laser is provided with an active layer 4, semiconductor layers 5 and 6 formed on the active layer 4 and each having a ridge-like waveguide 10, and an insulating film 9 formed on the semiconductor layer 6. The semiconductor laser is also provided with a first electrode layer 12 which is brought into contact with the semiconductor layer 6 through an opening 11 formed in the insulating film 9 and a striped second electrode layer 13 formed on the first electrode layer 12 along the direction of the waveguide 10. The semiconductor laser is constituted so that the distance R1from the end face 16 of a resonator to the end of the second electrode layer 13 becomes ≤20 μm. The semiconductor laser can be further provided with an electrode lead-out line led out from the second electrode layer 13, and a bonding pad 15 which is installed to the electrode lead-out line and positioned on the insulating film 9. COPYRIGHT: (C)2005,JPO&NCIPI