SPUTTERING METHOD AND APPARATUS

• Main Authors: UEDA YOSHIHIKO, OGAWA SOICHI, SUGIMOTO SHIGEJI, HARAGUCHI TAKAYUKI
• Format: Patent
• Language: English
• Published: 14.10.2004
• Edition: 7
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a sputtering method and apparatus which inhibit scattering of sputter particles in areas other than a substrate and therefore improve deposition speed and utilization efficiency of a target material. SOLUTION: In the sputtering method or apparatus, a magnetic field is generated in a direction perpendicular to sputtering surfaces 1' and 1a' on a pair of targets 1 and 1a which are located facing each other with a prescribed interval in a vacuum vessel 2. The targets 1 and 1a are subjected to sputtering, and the sputter particles scattered from the sputtered targets are deposited on the surface of the substrate 13 placed adjacent to a space 5. The targets 1 and 1a are slanted so that the sputtering surfaces 1' and 1a' each face the substrate surface 13' and that the angle between the sputtering surfaces 1' and 1a' is >0° and ≤45°. COPYRIGHT: (C)2005,JPO&NCIPI