CIRCUIT CHARACTERISTIC PREDICTION METHOD AND INFORMATION PROCESSING METHOD

PROBLEM TO BE SOLVED: To enable circuit characteristic prediction without using a device model such as a BSIM model (developed by the UCB). SOLUTION: A circuit characteristic prediction method includes saturated current in the characteristic curve of a MOS (metal oxide semiconductor) transistor as m...

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Bibliographic Details
Main Authors PETER LEE, TOBE HIDEO
Format Patent
LanguageEnglish
Published 30.09.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To enable circuit characteristic prediction without using a device model such as a BSIM model (developed by the UCB). SOLUTION: A circuit characteristic prediction method includes saturated current in the characteristic curve of a MOS (metal oxide semiconductor) transistor as model parameter information, a threshold by a boundary value and linear approximation of a linear region and a saturated region, and a gate capacity value, a drain connection capacity value and a mirror capacity in the MOS transistor, when including: a first processing for receiving model parameter information (20) concerning an MOS transistor through a network from computer devices (10) of a plurality of fabrication makers; and a second processing for predicting circuit characteristics by model-analyzing an output waveform of a circuit using the MOS transistor as a function of an input waveform and the output load capacity and selecting the fabrication makers on the basis thereof. COPYRIGHT: (C)2004,JPO&NCIPI
Bibliography:Application Number: JP20030065036