IMPROVING AGENT FOR SELECTIVITY RATIO OF POLISHING SPEED

PROBLEM TO BE SOLVED: To stably improve the ratio of the polishing speed of a silicon nitride film to that of a silicon oxide film at a low cost and to provide an improving agent for the selectivity ratio of the polishing speed achieving the improvement and further a polishing liquid composition com...

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Bibliographic Details
Main Author HAGIWARA TOSHIYA
Format Patent
LanguageEnglish
Published 30.09.2004
Edition7
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DRESSING OR CONDITIONING OF ABRADING SURFACES
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
POLISHES
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:PROBLEM TO BE SOLVED: To stably improve the ratio of the polishing speed of a silicon nitride film to that of a silicon oxide film at a low cost and to provide an improving agent for the selectivity ratio of the polishing speed achieving the improvement and further a polishing liquid composition comprising then improving agent for the selectivity ratio of the polishing speed and a method for improving the ratio of the polishing speed of the silicon nitride film to that of the silicon oxide film using the polishing liquid composition and a method for producing a substrate to be polished using the polishing liquid composition. SOLUTION: The improving agent for the selectivity ratio of the polishing speed is used as a compounding component of the polishing liquid composition containing abrasive grains at pH2-5.8 and an organic cationic compound. The improving agent improves the ratio of the polishing speed of the silicon nitride film to that of the silicon oxide film. The polishing liquid composition at pH2-5.8 comprises the improving agent for the selectivity ratio of the polishing speed and abrasive grains. The method for improving the ratio of the polishing speed of the silicon nitride film to that of the silicon oxide film comprises using the polishing liquid composition. The method for producing the substrate to be polished comprises using the polishing liquid composition. COPYRIGHT: (C)2004,JPO&NCIPI
Bibliography:Application Number: JP20030058888