METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: MOCHIZUKI KUNIO, FUJISHIMA NAOTO, TANAKA HIROYUKI, IWATANI MASANOBU, WAKIMOTO SETSUKO
• Format: Patent
• Language: English
• Published: 09.09.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which corners which are boundaries between side faces and a bottom face of concave portions can be rounded by carrying out isotropic dry etching after forming the concave portions such as trenches in a semiconductor layer. SOLUTION: After forming the trenches or the like in a surface layer of the semiconductor layer by anisotropic etching, isotropic dry etching is carried out, with the semiconductor layer being kept at 50-150°C, using a mixed gas containing CF4gas and O2gas, to deposit a protection film on an exposed surface by reaction between the mixed gas and the semiconductor layer. During the etching, a less amount of the protection film is deposited in the corners which are boundaries between the side faces and the bottom face of each concave section such as the trench, in ends of the concave portion, accelerating the isotropic etching by radicals of chemical species contained in the etching gas. COPYRIGHT: (C)2004,JPO&NCIPI