METHOD FOR MANUFACTURING SUBSTRATE FOR PRECISION COMPONENT

PROBLEM TO BE SOLVED: To provide a method capable of highly flattening a substrate for a precision component. SOLUTION: The flattening method comprises a 1st process for polishing the substrate by polishing load of 50-1,000 hPa (P1), by using a 1st polishing solution composition containing silica pa...

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Bibliographic Details
Main Authors TAKASHINA SHIGEAKI, YONEDA YASUHIRO, HAGIWARA TOSHIYA
Format Patent
LanguageEnglish
Published 02.09.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:PROBLEM TO BE SOLVED: To provide a method capable of highly flattening a substrate for a precision component. SOLUTION: The flattening method comprises a 1st process for polishing the substrate by polishing load of 50-1,000 hPa (P1), by using a 1st polishing solution composition containing silica particles, polymer particles and a cation compound in an aqueous medium; and a 2nd process for polishing the substrate by polishing load of 50-1,000 hPa (P2), by using a 2nd polishing solution composition containing silica particles in the aqueous medium. COPYRIGHT: (C)2004,JPO&NCIPI
Bibliography:Application Number: JP20030036314