CdTe TYPE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL FOR ELECTROOPTIC ELEMENTS

• Main Authors: HIRANO RYUICHI, TANIGUCHI HIDEYUKI
• Format: Patent
• Language: English
• Published: 26.08.2004
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; METALLURGY; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; TESTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a CdTe type compound semiconductor single crystal useful as an electrooptic element for a voltage detector. SOLUTION: In case of the chlorine-dope, the CdTe type compound which has a chlorine concentration in the crystal of 0.1-5.0 ppmwt and has no deposit of 2μm or more on the crystal surface is used as a material for electrooptic elements. In case of the In-dope, among the CdTe type compound semiconductor single crystal obtained by the melt growing method which dopes 0.05-1.0 ppmwt of indium into the CdTe raw material melt, the part whose solidification ratio of the crystal of 0.9 or less is used as a material for electrooptic elements. COPYRIGHT: (C)2004,JPO&NCIPI