SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To prevent deterioration of a gate insulating film due to charges in the etching process of a metal wiring layer and to prevent generation of a leak current resulting therefrom. SOLUTION: The semiconductor device comprises a semiconductor substrate 1, a plurality of gate electr...

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Bibliographic Details
Main Author SAIKI TAKAYUKI
Format Patent
LanguageEnglish
Published 19.08.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To prevent deterioration of a gate insulating film due to charges in the etching process of a metal wiring layer and to prevent generation of a leak current resulting therefrom. SOLUTION: The semiconductor device comprises a semiconductor substrate 1, a plurality of gate electrodes 14 and 24 formed on the semiconductor substrate through gate insulating films 13 and 23, impurity diffusion regions 11, 12, 21 and 22 for transistor formed in the semiconductor substrate on the opposite sides of each gate electrode, a first type well 20 formed in the semiconductor substrate, a protective electrode 32 formed on a specified region of the well through an insulating film, a protective impurity diffusion region 31 of second type different from the first type formed in the well, and at least one wiring layer 5 formed on the semiconductor substrate through an interlayer insulating film 4 and including interconnect lines connected electrically with at least one of the plurality of gate electrodes and the protective impurity diffusion region. COPYRIGHT: (C)2004,JPO&NCIPI
Bibliography:Application Number: JP20030022378