PLASMA PROCESSING SYSTEM

PROBLEM TO BE SOLVED: To provide a plasma processing system capable of processing the surface of a sample uniformly. SOLUTION: The plasma processing system comprises a microwave generator 1, a first dielectric 15 connected with the microwave generator 1 and having a rectangular cross-section along t...

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Bibliographic Details
Main Author SHINOHARA HISAKUNI
Format Patent
LanguageEnglish
Published 19.08.2004
Edition7
Subjects
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Summary:PROBLEM TO BE SOLVED: To provide a plasma processing system capable of processing the surface of a sample uniformly. SOLUTION: The plasma processing system comprises a microwave generator 1, a first dielectric 15 connected with the microwave generator 1 and having a rectangular cross-section along the processing surface of the sample 12 where two opposite sides are parallel and making the field strength distribution of the microwave generated by the microwave generator 1 substantially uniform along the processing surface of the sample 12, and a means for processing the sample 12 using plasma generated in a reactor 4 by the microwave wherein the interval Ld1of two opposite sides of the first dielectric 15 substantially satisfies following expression (1) Ld1=nd1(λ1/2), where λ1is the wavelength of a microwave in the first dielectric and nd1is an integer of 1 or above. COPYRIGHT: (C)2004,JPO&NCIPI
Bibliography:Application Number: JP20030022074