PLASMA PROCESSING SYSTEM
PROBLEM TO BE SOLVED: To provide a plasma processing system capable of processing the surface of a sample uniformly. SOLUTION: The plasma processing system comprises a microwave generator 1, a first dielectric 15 connected with the microwave generator 1 and having a rectangular cross-section along t...
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | English |
Published |
19.08.2004
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PROBLEM TO BE SOLVED: To provide a plasma processing system capable of processing the surface of a sample uniformly. SOLUTION: The plasma processing system comprises a microwave generator 1, a first dielectric 15 connected with the microwave generator 1 and having a rectangular cross-section along the processing surface of the sample 12 where two opposite sides are parallel and making the field strength distribution of the microwave generated by the microwave generator 1 substantially uniform along the processing surface of the sample 12, and a means for processing the sample 12 using plasma generated in a reactor 4 by the microwave wherein the interval Ld1of two opposite sides of the first dielectric 15 substantially satisfies following expression (1) Ld1=nd1(λ1/2), where λ1is the wavelength of a microwave in the first dielectric and nd1is an integer of 1 or above. COPYRIGHT: (C)2004,JPO&NCIPI |
---|---|
Bibliography: | Application Number: JP20030022074 |