PLASMA PROCESSING SYSTEM
PROBLEM TO BE SOLVED: To provide a plasma processing system capable of processing the surface of a sample uniformly. SOLUTION: The plasma processing system comprises a first dielectric 15 connected with a microwave generator and having a rectangular cross-section along the surface of the sample and...
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Main Author | |
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Format | Patent |
Language | English |
Published |
19.08.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Abstract | PROBLEM TO BE SOLVED: To provide a plasma processing system capable of processing the surface of a sample uniformly. SOLUTION: The plasma processing system comprises a first dielectric 15 connected with a microwave generator and having a rectangular cross-section along the surface of the sample and making the field strength distribution of a microwaves generated in the microwave generator substantially uniform along the processing surface of the sample, a slot plate 17 placed beneath the first dielectric 15 while having a plurality of slots 17a in order to maintain or enhance uniformity in the field strength distribution of a microwave in the first dielectric 15, a second dielectric placed beneath the slot plate 17 in order to maintain or enhance uniformity in the field strength distribution of a microwave being fed from the slot plate 17, and a means for processing the sample using plasma generated in a reactor by the microwaves. COPYRIGHT: (C)2004,JPO&NCIPI |
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AbstractList | PROBLEM TO BE SOLVED: To provide a plasma processing system capable of processing the surface of a sample uniformly. SOLUTION: The plasma processing system comprises a first dielectric 15 connected with a microwave generator and having a rectangular cross-section along the surface of the sample and making the field strength distribution of a microwaves generated in the microwave generator substantially uniform along the processing surface of the sample, a slot plate 17 placed beneath the first dielectric 15 while having a plurality of slots 17a in order to maintain or enhance uniformity in the field strength distribution of a microwave in the first dielectric 15, a second dielectric placed beneath the slot plate 17 in order to maintain or enhance uniformity in the field strength distribution of a microwave being fed from the slot plate 17, and a means for processing the sample using plasma generated in a reactor by the microwaves. COPYRIGHT: (C)2004,JPO&NCIPI |
Author | SHINOHARA HISAKUNI |
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Snippet | PROBLEM TO BE SOLVED: To provide a plasma processing system capable of processing the surface of a sample uniformly. SOLUTION: The plasma processing system... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING |
Title | PLASMA PROCESSING SYSTEM |
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