PLASMA PROCESSING SYSTEM

PROBLEM TO BE SOLVED: To provide a plasma processing system capable of processing the surface of a sample uniformly. SOLUTION: The plasma processing system comprises a first dielectric 15 connected with a microwave generator and having a rectangular cross-section along the surface of the sample and...

Full description

Saved in:
Bibliographic Details
Main Author SHINOHARA HISAKUNI
Format Patent
LanguageEnglish
Published 19.08.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
PERFORMING OPERATIONS
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
PLASMA TECHNIQUE
PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS
PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
THEIR RELEVANT APPARATUS
TRANSPORTING
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a plasma processing system capable of processing the surface of a sample uniformly. SOLUTION: The plasma processing system comprises a first dielectric 15 connected with a microwave generator and having a rectangular cross-section along the surface of the sample and making the field strength distribution of a microwaves generated in the microwave generator substantially uniform along the processing surface of the sample, a slot plate 17 placed beneath the first dielectric 15 while having a plurality of slots 17a in order to maintain or enhance uniformity in the field strength distribution of a microwave in the first dielectric 15, a second dielectric placed beneath the slot plate 17 in order to maintain or enhance uniformity in the field strength distribution of a microwave being fed from the slot plate 17, and a means for processing the sample using plasma generated in a reactor by the microwaves. COPYRIGHT: (C)2004,JPO&NCIPI
Bibliography:Application Number: JP20030022073