METHOD AND APPARATUS FOR FORMING BORON FILM

• Main Authors: HAMAGAKI MANABU, OZAWA SHUICHI
• Format: Patent
• Language: English
• Published: 19.08.2004
• Edition: 7
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method for forming a boron film with which the boron film having high strength and high quality can efficiently be formed with a simple apparatus structure at high safety. SOLUTION: After filling up argon gas into a treating vessel 11, an electron beam source 12 is worked, and the electron beam is irradiated toward a target 13 to heat the target 13. Thereafter, at the time point when the target 13 is heated to a prescribed temperature, a prescribed bias voltage is impressed to the target 13 with an electric source 14 and ion contained in the argon gas in the treating vessel 11, formed to plasma with the electric beam, is accelerated and collided to this target 13. In this way, the piling of the boron material is started on a substrate 30 and the boron film having desired film thickness on the substrate 30 is formed. COPYRIGHT: (C)2004,JPO&NCIPI