METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a trench gate structure, which is capable of removing a trench forming mask material by etching while protecting a gate insulating film and making cells finer than that in a case where a trench gate electrode is...

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Bibliographic Details
Main Author SUZUKI MIKIMASA
Format Patent
LanguageEnglish
Published 12.08.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a trench gate structure, which is capable of removing a trench forming mask material by etching while protecting a gate insulating film and making cells finer than that in a case where a trench gate electrode is set T-shaped in cross section. SOLUTION: A polysilicon film is formed inside a trench 16 cut in a semiconductor substrate 15 through the intermediary of a gate insulating film 17. At this point, the polysilicon film is set T-shaped in cross section. Then, the mask material for forming the trench 16 is removed by etching while the gate insulating film 17 is covered with the polysilicon film 18. In succession, a part of the polysilicon film 18 protruding upwards from the surface of the semiconductor substrate 15 is oxidized, thereby, a gate electrode 1 whose uppermost surface is set flush with the surface of the semiconductor substrate 15, is formed. COPYRIGHT: (C)2004,JPO&NCIPI
Bibliography:Application Number: JP20030010689