SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a distribution feedback-type semiconductor laser superior in an element characteristic and reliability. SOLUTION: The semiconductor laser is provided with a semiconductor substrate 1, an active layer 6 installed on the semiconductor substrate 1, a diffraction grating...

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Bibliographic Details
Main Authors TAKEMI MASAYOSHI, OTA TORU, TANIMURA JUNJI
Format Patent
LanguageEnglish
Published 05.08.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:PROBLEM TO BE SOLVED: To provide a distribution feedback-type semiconductor laser superior in an element characteristic and reliability. SOLUTION: The semiconductor laser is provided with a semiconductor substrate 1, an active layer 6 installed on the semiconductor substrate 1, a diffraction grating 3a which is arranged close to the active layer 6 and shows projecting and recessed shape that changes at a prescribed period along an optical waveguide direction, and a diffraction grating embedding layer 5 formed to embed the projecting and recessed shape of the diffraction grating 3a. A grating constant of the diffraction grating 3a is set to be different from that of the diffraction grating embedding layer 5. COPYRIGHT: (C)2004,JPO&NCIPI
Bibliography:Application Number: JP20030003060