METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: OKAWA HIROSHI, KOSHIO ATSUSHI
• Format: Patent
• Language: English
• Published: 29.07.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which dishing or erosion during CMP can be suppressed and yield be improved. SOLUTION: After an interlayer insulation film 2 is formed on a semiconductor substrate 1, a contact hole 3 reaching the semiconductor substrate 1 is formed. Then, a barrier metal 4 and a conductor layer 5 are formed in sequence on the entire surface of the substrate. The unnecessary conductor layer 5 formed on the interlayer insulation film 2 is polished and removed by CMP until the barrier metal 4 is exposed. Then, the unnecessary barrier metal 4 still left on the interlayer insulation film 2 is selectively etched by an etching liquid until the interlayer insulation film 2 is exposed, thus forming a contact plug 6 formed of the barrier metal 4a and the conductor layer 5a within the contact hole 3. COPYRIGHT: (C)2004,JPO&NCIPI