SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve refresh property and soft error tolerance. SOLUTION: Cylinder capacitor aperture 17b prolonged in the direction vertical to the main surface of a semiconductor substrate 100 is formed in the memory cell of the substrate 100. T...

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Bibliographic Details
Main Author KUBO SHUNJI
Format Patent
LanguageEnglish
Published 22.07.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve refresh property and soft error tolerance. SOLUTION: Cylinder capacitor aperture 17b prolonged in the direction vertical to the main surface of a semiconductor substrate 100 is formed in the memory cell of the substrate 100. The aperture 17b penetrates a silicon oxide film 15, a silicon nitride film 14 and a silicon oxide film 12. A capacitor lower electrode 21, a dielectric film 500 and a capacitor upper electrode 22 are formed in the aperture 17b along a surface thereof. A bottom face of the aperture 17b is constituted by using a silicon nitride film 11. COPYRIGHT: (C)2004,JPO&NCIPI
Bibliography:Application Number: JP20020373669