NEGATIVE RESIST COMPOSITION

• Main Authors: TAKAHASHI AKIRA, YASUNAMI SHOICHIRO, SHIRAKAWA KOJI
• Format: Patent
• Language: English
• Published: 15.07.2004
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

PROBLEM TO BE SOLVED: To obtain techniques to improve the performance in microprocessing of a semiconductor element using high energy rays, in particular, KrF excimer laser light, X-rays, electron beams or EUV (extreme UV) rays, and to provide a negative resist composition satisfying the requirements for high sensitivity, high resolution, a preferable pattern profile and preferable dependence on the pattern density. SOLUTION: The negative resist composition contains: (A) an alkali-soluble polymer; (B) a crosslinking agent which crosslinks with the alkali-soluble polymer (A) by the effect of an acid; (C) a compound having a specified phenacyl group which generates sulfonic acid by irradiation of radiation or active rays; and (D) a compound which generates carboxylic acid by irradiation of radiation or active rays. COPYRIGHT: (C)2004,JPO&NCIPI