METHOD AND EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR ELEMENT

• Main Author: TAKAHASHI KOUSEI
• Format: Patent
• Language: English
• Published: 08.07.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method and equipment for manufacturing a semiconductor element capable of reducing an oxygen concentration without impairing growth characteristics in the vapor phase growth of a crystal. SOLUTION: In this method for manufacturing a semiconductor element, a p-type dopant 21 is supplied to the peripheral section (for example, oxygen trap material 23) of a semiconductor layer epitaxial growth area (growth substrate 5) so that any mixed impurity (for example, oxygen) to a semiconductor layer can be reduced. The manufacturing device of the semiconductor element is provided with a material supply source (p-type dopant cell 22) for selectively supplying the p-type dopant 21 to the peripheral section (for example, oxygen trap member 23). The p-type dopant is supplied to the peripheral section of the semiconductor layer epitaxial growth area so that it is possible to realize the further a reduction in oxygen concentration without impairing growth characteristics in the vapor phase growth of the crystal. COPYRIGHT: (C)2004,JPO&NCIPI