METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, ELECTROOPTIC DEVICE, AND ELECTRONIC EQUIPMENT

• Main Author: HIROSHIMA YASUSHI
• Format: Patent
• Language: English
• Published: 02.07.2004
• Edition: 7
• Subjects: ADVERTISING; BASIC ELECTRIC ELEMENTS; CRYPTOGRAPHY; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DISPLAY; DISPLAYING; EDUCATION; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; LABELS OR NAME-PLATES; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEALS; SEMICONDUCTOR DEVICES; SIGNS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a thin film transistor using nearly single-crystal grains of a semiconductor material in its channel forming region and having an excellent S value which is the electric characteristic of an under-threshold region. SOLUTION: The thin film transistor T contains a gate electrode 22, a source region 24, a drain region 25, and the channel forming region 26. The silicon film used for forming the channel forming region 26 is composed of nearly single-crystal silicon crystal grains grown from a crystal growth starting point and has a film thickness of 30-150 nm. Consequently, the number of crystal defects contained in the silicon crystal grains can be reduced, and the thin film transistor having an excellent S value can be attained. COPYRIGHT: (C)2004,JPO&NCIPI