PLASMA TREATMENT METHOD AND DEVICE THEREOF

• Main Author: SAKIMA HIROMI
• Format: Patent
• Language: English
• Published: 17.06.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a plasma treatment method which suppresses reduction of an etching rate in a non-deposit process without carrying out seasoning immediately after dry cleaning. SOLUTION: The plasma treatment method is provided wherein a single treatment chamber is used for a step for plasma treatment which substantially allows deposits to attach to the treatment chamber, and for a step of plasma treatment which substantially allows no deposits to attach to the treatment chamber. The method comprises at least a step of dry cleaning for cleaning the treatment chamber by using a dummy substrate during a period between the plasma treatment accompanied by deposits and the plasma treatment without accompanied by deposits. The dry cleaning step is a step for carrying out dry cleaning by providing the treatment chamber with a gas for removing deposits produced in the treatment chamber during the plasma treatment and a gas capable of etching the dummy substrate. COPYRIGHT: (C)2004,JPO