MOLECULAR AND THIN FILM TRANSISTOR BY INCLUSION FULLERENE

PROBLEM TO BE SOLVED: To provide a molecular transistor constituted to have a band gap and a uniform structure capable of operating at room temperatures and controlling an active element. SOLUTION: A molecular and thin film transistor by the inclusion fullerene of a formula: MxÐCyas the active eleme...

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Bibliographic Details
Main Authors KO KOKIN, ATA MASAFUMI
Format Patent
LanguageEnglish
Published 17.06.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MANUFACTURE OR TREATMENT THEREOF
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
METALLURGY
NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS
NANOTECHNOLOGY
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
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Summary:PROBLEM TO BE SOLVED: To provide a molecular transistor constituted to have a band gap and a uniform structure capable of operating at room temperatures and controlling an active element. SOLUTION: A molecular and thin film transistor by the inclusion fullerene of a formula: MxÐCyas the active element is provided äwherein M is an element including in the fullerene selected from the group consisting of IA, IIA, VA and IIIB group elements of a periodic table, x satisfies 1≤x≤4 (wherein x is the number of an inclusion atom), and y satisfies 36≤y≤100}. The band gap of the inclusion fullerene is 0.2 to 1.2 eV. The inclusion fullerene can be used for a variety of transistors of single molecule, dimer, linear polymer and thin film. COPYRIGHT: (C)2004,JPO
Bibliography:Application Number: JP20020334894