METHOD FOR GROWING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

• Main Authors: OWADA MASASHI, YABUKI SHINJI
• Format: Patent
• Language: English
• Published: 03.06.2004
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for growing a compound semiconductor single crystal while suppressing growth of polycrystal or shortage of the outer diameter. SOLUTION: A crucible 24 which has a hole 23 in the bottom center, the hole having the inner diameter larger than the outer diameter of the compound semiconductor single crystal 12, and which has the outer diameter smaller than a crucible 21 is coaxially disposed in the crucible 21. This suppresses temperature rise in the compound semiconductor single crystal 12 due to heat conduction from the outside or suppresses temperature rise in the ambient space of the compound semiconductor single crystal as well as accelerates heat dissipation from the compound semiconductor single crystal 12. Thus, the obtained compound semiconductor single crystal 12 suppresses growth of polycrystal or shortage of the outer diameter. COPYRIGHT: (C)2004,JPO